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NTMSD6N303R2 Power MOSFET
6 Amps, 30 Volts N-Channel SO-8 FETKYt
The FETKY product family incorporates low RDS(on) MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications.
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MOSFET 6.0 AMPERES 30 VOLTS 24 mW @ VGS = 10 V (Typ) SCHOTTKY DIODE 6.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A
A A S G 1 2 3 4 5 (TOP VIEW) 8 7 6 C C D D
* Pb-Free Packages are Available
Applications
* * * * * * *
Buck Converter Buck-Boost Synchronous Rectification Low Voltage Motor Control Battery Packs Chargers Cell Phones
MOSFET MAXIMUM RATINGS
(TJ = 25C unless otherwise noted) (Note 1) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous Drain Current - (Note 2) - Continuous @ TA = 25C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 2) Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) Symbol VDSS VDGR VGS IDM PD EAS ID Value 30 30 "20 6.0 30 2.0 325 Unit Vdc Vdc Vdc Adc Apk Watts mJ 8 1 SO-8 CASE 751 STYLE 18 E6N3 x A Y WW G
MARKING DIAGRAM & PIN ASSIGNMENT
8 C C DD
E6N3x AYWW G G 1 A A SG
= Device Code = Blank or S = Assembly Location = Year = Work Week = Pb-Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%. 2. Mounted on 2 square FR4 board (1 in sq, 2 oz. Cu 0.06 thick single sided), 10 sec. max.
ORDERING INFORMATION
Device NTMSD6N303R2 NTMSD6N303R2G NTMSD6N303R2SG Package SO-8 Shipping 2500/Tape & Reel
SO-8 2500/Tape & Reel (Pb-Free) SO-8 2500/Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 2
1
Publication Order Number: NTMSD6N303R2/D
NTMSD6N303R2
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 3) (Rated VR) TA = 104C Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half-wave, single phase, 60 Hz) THERMAL CHARACTERISTICS - SCHOTTKY AND MOSFET Thermal Resistance - Junction-to-Ambient (Note 4) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 5) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 3) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 4) - Schottky Thermal Resistance - Junction-to-Ambient (Note 5) - Schottky Thermal Resistance - Junction-to-Ambient (Note 3) - Schottky Operating and Storage Temperature Range RqJA RqJA RqJA RqJA RqJA RqJA TJ, Tstg 167 97 62.5 197 97 62.5 -55 to +150 C/W Symbol VRRM VR IO Ifrm Ifsm Value 30 2.0 4.0 30 Unit Volts Amps Amps Amps
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Mounted on 2 square FR4 board (1 in sq, 2 oz. Cu 0.06 thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2 square FR4 board (1 in sq, 2 oz. Cu 0.06 thick single sided), Steady State.
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristics Maximum Instantaneous Forward Voltage (Note 6) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (Note 6) VR = 30 V VR = 30 V IR Symbol VF TJ = 25C 0.28 0.42 0.50 TJ = 25C 250 - dV/dt 10,000 Value TJ = 125C 0.13 0.33 0.45 TJ = 125C - 25 mA mA V/ms Unit Volts
Maximum Voltage Rate of Change 6. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
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NTMSD6N303R2
MOSFET ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 25C) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 7) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss td(on) (VDD = 15 Vdc, ID = 1 A, VGS = 10 V, RG = 6 W) tr td(off) tf td(on) (VDD = 15 Vdc, ID = 1 A, VGS = 4.5 V, RG = 6 W) tr td(off) tf QT (VDS = 15 Vdc, VGS = 10 Vdc, ID = 5 A) BODY-DRAIN DIODE RATINGS (Note 7) Diode Forward On-Voltage Reverse Recovery Time (IS = 5 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = 5 A, dIS/dt = 100 A/ms, VGS = 0 V) 7. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 8. Switching characteristics are independent of operating junction temperature. (IS = 1.7 Adc, VGS = 0 V) (IS = 1.7 Adc, VGS = 0 V, TJ = 150C) VSD trr ta tb QRR - - - - - - 0.75 0.62 26 11 15 0.015 1.0 - - - - - mC Vdc ns Q1 Q2 Q3 - - - - - - - - - - - - - - - 680 210 70 9 22 45 45 13 27 22 34 19 2.4 5.0 4.3 950 300 135 18 40 80 80 30 50 40 70 30 - - - nC ns ns pF VGS(th) Vdc 1.0 - - - - 1.8 4.6 0.024 0.030 10 2.5 - 0.032 0.040 - mV/C W V(BR)DSS Vdc 30 - - - - - 30 - - - - - 1.0 20 100 mV/C mAdc Symbol Min Typ Max Unit
IDSS
IGSS
nAdc
RDS(on)
gFS
Mhos
SWITCHING CHARACTERISTICS (Notes 7 & 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
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NTMSD6N303R2
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
12 ID, DRAIN CURRENT (AMPS) 10 8 6 4 2 0 2.8 V VGS = 2.6 V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3V 12 ID, DRAIN CURRENT (AMPS) VDS 10 V 10 8 6 TJ = 25C 4 2 0 TJ = 125C TJ = -55C 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10 V 6V 4V
3.4 V 3.6 V 3.8 V
TJ = 25C 3.2 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 1 2 3 4 5 6 7 8 9 10 11 12 T = 25C T = -55C T = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 1 2
Figure 2. Transfer Characteristics
VGS = 10
TJ = 25C
VGS = 4.5 V
VGS = 10 V
3
4
5
6
7
8
9
10
11 12
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 ID = 3 A VGS = 10 V 10,000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C
1000
100
TJ = 125C
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTMSD6N303R2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0
Ciss
10 8
TJ = 25C
QT
30
VGS 6 4 2 Q3 0 0 2 4 6 8 10 12 14 VDS Q1 Q2
20
Crss
Ciss
10 ID = 6 A TJ = 25C 16 18 20 0
Coss
VDS = 0 V VGS = 0 V
Crss 25
10
5 10 15 20 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 VDD = 15 V ID = 6 A VGS = 10 V
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
6
td(off) tf tr
IS, SOURCE CURRENT (AMPS)
5 4 3 2 1 0
VGS = 0 V TJ = 25C
t, TIME (ns)
100
10
td(on)
1
1
10 RG, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 ID, DRAIN CURRENT (AMPS) Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating, 1.0 ms 10 10 s max. 10 ms 1 325 300 275 250 225 200 175 150 125 100 75 50 25 0
Figure 10. Diode Forward Voltage versus Current
ID = 6 A
VGS = 12 V SINGLE PULSE TC = 25C
dc
0.1
0.01
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100
25
50
75
100
125
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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NTMSD6N303R2
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 CHIP JUNCTION 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F AMBIENT 1000
0.1
Figure 13. FET Thermal Response
di/dt IS trr ta tb TIME tp IS 0.25 IS
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10 85C 25C 10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
85C
TJ = 125C 1.0
-40 C
TJ = 125C 1.0
25C
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
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NTMSD6N303R2
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.1 IR, REVERSE CURRENT (AMPS) TJ = 125C 0.01 85C 0.001 0.1 TJ = 125C 0.01 0.001 25C
IR, MAXIMUM REVERSE CURRENT (AMPS) 20 25 30
0.0001 25C
0.0001
0.00001 0.000001 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS)
0.00001
0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current
Figure 18. Maximum Reverse Current
IO , AVERAGE FORWARD CURRENT (AMPS)
1000
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p dc FREQ = 20 kHz
C, CAPACITANCE (pF)
100
10 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 19. Typical Capacitance
Figure 20. Current Derating
PFO , AVERAGE POWER DISSIPATION (WATTS)
1.75 1.50 1.25 1.00 0.75 Ipk/Io = 20 0.50 0.25 0 0 1.0 2.0 3.0 4.0 5.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p dc SQUARE WAVE
Figure 21. Forward Power Dissipation
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NTMSD6N303R2
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.1010 W CHIP JUNCTION 39.422 mF SINGLE PULSE 1.2674 W 27.987 W 30.936 W 36.930 W 0.2292 F 2.267 F AMBIENT 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03
0.01
493.26 mF 0.0131 F
0.001
1.0E-05
1.0E-04
1.0E-03
Figure 22. Schottky Thermal Response
TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS
LO + +
Vin -
CO
Vout -
LOAD
Buck Regulator
LO + +
Vin -
CO
Vout -
LOAD
Synchronous Buck Regulator
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NTMSD6N303R2
TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS
L1 + +
Vin Q1 -
CO
Vout -
LOAD
Boost Regulator
+
+
Vin -
CO
Vout -
LOAD
Buck-Boost Regulator
MULTIPLE BATTERY CHARGERS
Buck Regulator/Charger
Q1 + Vin - D1 CO LO Q2 D2 BATT #1
Q3
D3 BATT #2
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NTMSD6N303R2
TYPICAL APPLICATIONS Li-Ion BATTERY PACK APPLICATIONS
Battery Pack
PACK +
Li-Ion BATTERY CELLS
SMART IC
DISCHARGE
CHARGE
Q1
Q2 PACK -
SCHOTTKY
SCHOTTKY
* * * *
Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on.
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NTMSD6N303R2
PACKAGE DIMENSIONS
SOIC-8 NB CASE 751-07 ISSUE AG
-X- A
8 5
B
1
S
4
0.25 (0.010)
M
Y
M
-Y- G
K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
C -Z- H D 0.25 (0.010)
M SEATING PLANE
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
SOLDERING FOOTPRINT*
1.52 0.060
7.0 0.275
4.0 0.155
0.6 0.024
1.270 0.050
SCALE 6:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY is a trademark of International Rectifier Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTMSD6N303R2/D

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